Effects of 4He impurities on 3He nuclear spin-lattice relaxation in hcp solid 3He

Nuclear spin-lattice relaxation properties of hcp solid ³He with ⁴He impurities have been studied. At temperatures below the exchange plateau region, three kinds of relaxation time were observed. To analyze the data, a phenomenological four-bath model was developed, the four baths being the Zeeman bath, the phonon bath, an X-bath, and a Y-bath. The X-bath consists of the exchange bath and a part of the ⁴He-⁴He elastic interaction bath. The Y-bath is the main part of the elastic interaction bath. We measured the concentration dependence of the energy constants of all the baths, as well as the temperature and concentration dependences of the three kinds of relaxation time. The relaxation behavior corresponding to the process between the X-bath and the Y-bath could not be expressed by a single exponential function of time and the relaxation rate was strongly dependent on the concentration. This process may be related to the internal thermal equilibrium process within the elastic interaction bath. The impurity-dependent relaxation time between the X-bath and the phonon bath had a temperature dependence of T ^–n with n = 7.4±0.3.     

Logic circuit synthesis using Prolog

This paper briefly reviews the current use of CAD in logic design, and then describes an expert system used to synthesize logic circuits. Specialized knowledge dealing with standard TTL ICs is written in Prolog and AGE, and the results are compared.     

A high‐performance sorting algorithm for multicore single‐instruction multiple‐data processors

Many sorting algorithms have been studied in the past, but there are only a few algorithms that can effectively exploit both single‐instruction multiple‐data (SIMD) instructions and thread‐level parallelism. In this paper, we propose a new high‐performance sorting algorithm, called aligned‐access sort (AA‐sort), that exploits both the SIMD instructions and thread‐level parallelism available on today's multicore processors. Our algorithm consists of two phases, an in‐core sorting phase and an out‐of‐core merging phase. The in‐core sorting phase uses our new sorting algorithm that extends combsort to exploit SIMD instructions. The out‐of‐core algorithm is based on mergesort with our novel vectorized merging algorithm. Both phases can take advantage of SIMD instructions. The key to high performance is eliminating unaligned memory accesses that would reduce the effectiveness of SIMD instructions in both phases. We implemented and evaluated the AA‐sort on PowerPC 970MP and Cell Broadband Engine platforms. In summary, a sequential version of the AA‐sort using SIMD instructions outperformed IBM's optimized sequential sorting library by 1.8 times and bitonic mergesort using SIMD instructions by 3.3 times on PowerPC 970MP when sorting 32 million random 32‐bit integers. Also, a parallel version of AA‐sort demonstrated better scalability with increasing numbers of cores than a parallel version of bitonic mergesort on both platforms. Copyright © 2011 John Wiley & Sons, Ltd.     

Stress intensity factors of an inclined elliptical crack near a bimaterial interface

In this paper the stress intensity factors are discussed for an inclined elliptical crack near a bimaterial interface. The solution utilizes the body force method and requires Green’s functions for perfectly bonded semi-infinite bodies. The formulation leads to a system of hypersingular integral equation whose unknowns are three modes of crack opening displacements. In the numerical calculation, unknown body force densities are approximated by using fundamental density functions and polynomials. The results show that the present method yields smooth variations of stress intensity factors along the crack front accurately. Distributions of stress intensity factors are presented in tables and figures with varying the shape of crack, distance from the interface, and elastic modulus ratio. It is found that the inclined crack can be evaluated by the models of vertical and parallel cracks within the error of 24% even for the cracks very close to the interface.     

Alteration of internal stresses in SiO2/Cu/TiN thin films by X-ray and synchrotron radiation due to heat treatment

A break of wiring by stress-migration becomes a problem with an integrated circuit such as LSI. The present study investigates residual stress in SiO₂/Cu/TiN film deposited on glass substrates. A TiN layer, as an undercoat, was first deposited on the substrate by arc ion plating and then Cu and SiO₂ layers were deposited by plasma coating. The crystal structure and the residual stress in the deposited multi-layer film were investigated using in-lab. X-ray equipment and a synchrotron radiation device that emits ultra-high-intensity X-rays. It was found that the SiO₂ film was amorphous and both the Cu and TiN films had a strong {1 1 1} orientation. The Cu and TiN layers in the multi thick (Cu and TiN:1.0 μm)-layer film and multi thin (0.1 μm)-layer film exhibited tensile residual stresses. Both tensile residual stresses in the multi thin-layer film are larger than the multi thick-layer film. After annealing at 400 °C, these tensile residual stresses in both the films increased with increasing the annealing temperature. Surface swelling formations, such as bubbles were observed in the multi thick-layer film. However, in the case of the multi thin-layer films, there was no change in the surface morphology following heat-treatment.     

Mass recovery adsorption refrigeration cycle—improving cooling capacity

The study investigates the performance of two-bed, silica gel-water adsorption refrigeration cycle with mass recovery process. The cycle with mass recovery can be driven by the relatively low temperature heat source. In an adsorption refrigeration cycle, the pressures in adsorber and desorber are different. The chiller with mass recovery process utilizes the pressure difference to enhance the refrigerant mass circulation. Cooling capacity and coefficient of performance (COP) were calculated by cycle simulation computer program to analyze the influences of operating conditions. The mass recovery cycle was compared with conventional cycle such as the single stage adsorption cycle in terms of cooling capacity and COP. The results show that the cooling capacity of mass recovery cycle is superior to that of conventional cycle and the mass recovery process is more effective for low regenerating temperature.     

High permittivity BaTiO3 and BaTiO3-polymer nanocomposites enabled by cold sintering with a new transient chemistry: Ba(OH)2∙8H2O

Cold sintering process (CSP) offers a promising strategy for the fabrication of innovative and advanced high permittivity dielectric nanocomposite materials. Here, we introduce Ba(OH)₂?8H₂O hydrated flux as a new transient chemistry that enables the densification of BaTiO₃ in a single step at a temperature as low as 150 °C. This remarkably low temperature is near its Curie transition of 125 °C, associated with a displacive phase transition. The cold sintered BaTiO₃ shows a relative density of 95 % and a room temperature relative permittivity over 1000. This new hydrated flux permits the fabrication of a unique dense BaTiO₃-polymer nanocomposite with a high volume fraction of ceramics ((1-x) BaTiO₃ – x PTFE, with x = 0.05). The composite exhibits a relative permittivity of approximately 800, at least an order of magnitude higher than previous reports on polymer composites with BaTiO₃ nanoparticle fillers that are typically well below 100. Unique high permittivity dielectric nanocomposites with enhanced resistivities can now be designed using polymers to engineer grain boundaries and CSP as a processing method opening up new possibilities in dielectric materials design.